FDP10N60NZ
Manufacturer:
On Semiconductor
Mfr.Part #:
FDP10N60NZ
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 185 W 600 V Continuous Drain Current (ID):10 A 23 nC
| Parameter | Value |
|---|---|
| Length | 10.36 mm |
| Width | 4.9 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 16.07 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 1.8 g |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 185 W |
| Power Dissipation | 185 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 1.475 nF |
| Continuous Drain Current (ID) | 10 A |
| Rds On Max | 750 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 70 ns |
| Element Configuration | Single |
| Rise Time | 50 ns |
| Gate Charge | 23 nC |
| Drain to Source Resistance | 640 mΩ |
| Gate to Source Voltage (Vgs) | -25 V, 25 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 5 V |
| FET Type(Transistor Polarity) | N-Channel |
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